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K4021

Toshiba Semiconductor
Part Number K4021
Manufacturer Toshiba Semiconductor
Description 2SK4021
Published Sep 9, 2015
Detailed Description 2SK4021 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4021 Switching Regu...
Datasheet PDF File K4021 PDF File

K4021
K4021

Overview
2SK4021 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON-resistance: RDS (ON) = 0.
8 Ω (typ.
) z High forward transfer admittance: |Yfs| = 4.
5 S (typ.
) z Low leakage current: IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode: Vth = 1.
5 to 3.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) 6.
5 ± 0.
2 5.
2 ± 0.
2 0.
9 1.
6 5.
5 ± 0.
2 1.
5 ± 0.
2 Unit: mm 0.
6 MAX.
1.
1 ± 0.
2 0.
6 MAX.
4.
1 ± 0.
2 5.
7 Characteristic Symbol Rating Unit 2.
3 2.
3 2.
3 ± 0.
2 Drain−source voltage VDSS 250 V Drain−gate voltage (RGS = 20 kΩ) VDGR 250 V 123 Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) VGSS ID IDP PD EAS ±20 V 4.
5 A 18 A 20 W 51 mJ 0.
8 MAX.
1.
1 MAX.
0.
6 ± 0.
15 0.
6 ± 0.
15 1.
GATE 2.
DRAIN （HEAT SINK） 3.
SOURSE 2 1 3 Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range IAR EAR Tch Tstg 4.
5 2.
0 150 −55 to 150 A mJ °C °C JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 0.
36 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 6.
25 °C / W 125 °C / W Note 1: Ensure th...


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