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K4013

Toshiba Semiconductor
Part Number K4013
Manufacturer Toshiba Semiconductor
Description 2SK4013
Published May 4, 2012
Detailed Description www.DataSheet4U.com 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Reg...
Datasheet PDF File K4013 PDF File

K4013
K4013

Overview
www.
DataSheet4U.
com 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.
35 Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 640 V) Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 800 800 ±30 6 18 45 317 6 4.
5 150 −55 to 150 www.
DataSheet.
co.
kr Unit V V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight: 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
78 62.
5 Unit °C/W °C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 14.
5 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
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