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K4017

Toshiba Semiconductor
Part Number K4017
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOS Type FET
Published Jun 22, 2015
Detailed Description 2SK4017 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regu...
Datasheet PDF File K4017 PDF File

K4017
K4017

Overview
2SK4017 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.
07 Ω (typ.
) z High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) z Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 5 20 20 40.
5 5 2 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 6.
5 ± 0.
2 5.
2 ± 0.
2 Unit: mm 0.
6 MAX.
1.
5 ± 0.
2 1.
6 5.
5 ± 0.
2 0.
9 1.
1 ± 0.
2 0.
6 MAX.
4.
1 ± 0.
2 5.
7 2.
3 2.
3 2.
3 ± 0.
2 123 0.
8 MAX.
1.
1 MAX.
0.
6 ± 0.
15 0.
6 ± 0.
15 1.
GATE 2.
DRAIN （HEAT SINK） 3.
SOURSE 2 1 3 JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7J2B Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 6.
25 °C / W 125 °C / W Note 1: Ensure that th...


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