SVD2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology.
The improved
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.
)=4.
0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capabili...