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SVD2N65T

Silan Microelectronics
Part Number SVD2N65T
Manufacturer Silan Microelectronics
Description 650V N-CHANNEL MOSFET
Published Oct 20, 2014
Detailed Description SVD2N65M/F/T/D_Datasheet 2A, 650V N-Channel MOSFET DESCRIPTION SVD2N65M/F/T/D is an N-channel enhancement mode power MOS...
Datasheet PDF File SVD2N65T PDF File

SVD2N65T
SVD2N65T

Overview
SVD2N65M/F/T/D_Datasheet 2A, 650V N-Channel MOSFET DESCRIPTION SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM 2 structure VDMOS technology.
The improved 1 3 TO-251-3L planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
1.
Gate 2.
Drain 3.
Source TO-252-2L FEATURES TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ.
)=4.
5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVD2N65M SVD2N65F SVD2N65T SVD2N65D SVD2N65DTR Package TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVD2N65M SVD2N65F SVD2N65T SVD2N65D SVD2N65D Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2010.
10.
19 Page 1 of 9 SVD2N65M/F/T/D_Datasheet ABSOLUTE MAXIMUM RATINGS (unless otherwise noted, TC=25°C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (TC=25°C) - Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg 44 0.
22 SVD2N65M/D SVD2N65T 650 ±30 2.
0 44 0.
22 60 -55～+150 -55～+150 23 0.
18 SVD2N65F Unit V V A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVD2N65D/M/T 2.
87 110 SVD2N65F 5.
5 62.
5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (unless otherwise noted, TC=25°C) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Current Gate Threshold Voltage Static Drain- Sour...


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