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SVD2N60T

Part Number	SVD2N60T
Manufacturer	Silan Microelectronics
Description	600V N-Channel MOSFET
Published	Jan 31, 2012
Detailed Description	www.DataSheet.co.kr SVD2N60T 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION 2 SVD2N60T is an N-channel enhancement mode...
Datasheet	SVD2N60T PDF File

Overview

www.
DataSheet.
co.
kr SVD2N60T 2A, 600V N-Channel MOSFET GENERAL DESCRIPTION 2 SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S1 3 1.
Gate 2.
Drain 3.
Source structure DMOS technology.
The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
12 3 TO-220-3L FEATURES ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.
)=4.
0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING SPECIFICATIONS Part No.
SVD2N60T Package TO-220-3L Marking SVD2N60T Shipping 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power ...

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