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SVD2N60M

Silan Microelectronics
Part Number SVD2N60M
Manufacturer Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Published Oct 19, 2014
Detailed Description SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode p...
Datasheet PDF File SVD2N60M PDF File

SVD2N60M
SVD2N60M

Overview
SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES ∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.
)=4.
0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVD2N60M SVD2N60M SVD2N60F SVD2N60T SVD2N60D SVD2N60DTR Package TO-251-3L TO-251D-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVD2N60M SVD2N60M SVD2N60F SVD2N60T SVD2N60D SVD2N60D Material Pb free Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
3 2011.
06.
28 Page 1 of 10 SVD2N60M/F/T/D_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 34 0.
27 Rating SVD2N60M/D SVD2N60T 600 ±30 2.
0 8.
0 44 0.
35 118 -55～+150 -55～+150 23 0.
18 SVD2N60F Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD2N60M/D 3.
7 110 SVD2N60T 2.
86 62.
5 SVD2N60F 5.
56 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Th...


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