SVD2N65M/F/T/D_Datasheet
2A, 650V N-Channel MOSFET
DESCRIPTION
SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-Rin
TM
2
structure VDMOS technology.
The improved
1 3
TO-251-3L
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
1.
Gate 2.
Drain 3.
Source TO-252-2L
FEATURES
TO-220-3L
TO-220F-3L
∗ ∗ ∗ ∗ ∗
2A, 650V,RDS(on)(typ.
)=4...