Part Number
|
K2959 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N Channel MOS FET |
Published
|
Nov 12, 2014 |
Detailed Description
|
2SK2959
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 7mΩ typ.
• 4V gate ...
|
Datasheet
|
K2959
|
Overview
2SK2959
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 7mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220AB
D
G
S
ADE-208-569C (Z) 4th.
Edition Aug 1998
1 2 3
1.
Gate 2.
Drain(Flange 3.
Source
2SK2959
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C
Ratings 30 ±20 50 200 50 75 150 –55 to +150
Unit V V A A A W °C °C
Electri...
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