Part Number
|
K3142 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
2SK3142 |
Published
|
Dec 27, 2014 |
Detailed Description
|
2SK3142
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4 mΩ typ.
• Low dri...
|
Datasheet
|
K3142
|
Overview
2SK3142
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
ADE-208-681A (Z) 2nd.
Edition
February 1999
D
G
123
1.
Gate
2.
Drain
3.
Source
S
2SK3142
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I Note 1
D(pulse)
I DR I Note 3
AP
E Note 3 AR
Pch Note 2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value ...
Similar Datasheet