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K3126

Toshiba Semiconductor
Part Number K3126
Manufacturer Toshiba Semiconductor
Description 2SK3126
Published Nov 25, 2007
Detailed Description 2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3126 Switching Regulator Applications U...
Datasheet PDF File K3126 PDF File

K3126
K3126

Overview
2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3126 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.
48 Ω (typ.
) z High forward transfer admittance : |Yfs| = 7.
5 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V) z Enhancement mode : Vth = 2.
4~3.
4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 450 450 ±30 10 40 40 222 10 4 150 −55~150 V V V A A W mJ A mJ °C °C JEDEC — JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.
9 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high t...


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