2SC4002
NPN Silicon Triple Diffused Planar
Transistor
for High-Voltage Driver Applications.
The
transistor is subdivided into two groups, D and E, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range
1.
Emitter 2.
Collector 3.
Base TO-92 Plastic Package Weight approx.
0.
18g
Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS
Value 400 400
5 200 400 600 150 -55 to +150
Unit V V V mA mA
mW OC OC
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