2SJ297S

2SJ297(L), 2SJ297(S) Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline LDPAK 4 123 D G S 4 12 3 1. Gate 2. Drain 3. Source 4. Drain N...