2SK4012
com
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching
Regulator Applications
Unit: mm
z Low drain−source ON-resistance
: RDS (ON) = 0.
33 Ω (typ.
)
z High forward transfer admittance
: |Yfs| = 8.
5 S (typ.
)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive ...