Part Number
|
30H150 |
Manufacturer
|
FNK |
Description
|
N-Channel MOSFET |
Published
|
Oct 10, 2015 |
Detailed Description
|
30H150
N-Channel Enhancement Mode MOSFET
Features
• 30V/150 A
RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V...
|
Datasheet
|
30H150
|
Overview
30H150
N-Channel Enhancement Mode MOSFET
Features
• 30V/150 A
RDS(ON)=4.
5mΩ ( ) @ VGS=10V RDS(ON)=6.
5mΩ ( ) @ VGS=4.
5V
• Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Desktop Computer or
DC/DC Converters.
D
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
IDP 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Therm...
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