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30H10K

Part Number	30H10K
Manufacturer	FUMAN
Description	N-Channel Trench Power MOSFET
Published	May 25, 2019
Detailed Description	SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(：S&CIC1689) N-Channel Trench Power MOSFET N-C hannel Trench ...
Datasheet	30H10K PDF File

Overview

SHEN ZHEN FINE MADE ELECTRONICS GROUP CO.
, LTD.
30H10K(：S&CIC1689) N-Channel Trench Power MOSFET N-C hannel Trench Power MOSFET General Description The 30H10K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V.
This device is suitable for use as a wide variety of applications.
Features ● VDS = 30V,ID =100A RDS(ON) < 4.
2mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management 100% UIS TESTED! 100% ΔVds TESTED! Package Marking and Ordering Information Device Marking Device Device Package 30H10K 30H10K TO-252 Schematic Diagram 30H10K Marking and pin Assignment TO-252(DPAK) top view Reel Size 325mm Tape width 16mm Quantity 2500 Table 1.
Absolute Maximum Ratings (TA=25℃) Symbol ...

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