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30H150

FNK
Part Number 30H150
Manufacturer FNK
Description N-Channel MOSFET
Published Oct 10, 2015
Detailed Description 30H150 N-Channel Enhancement Mode MOSFET Features • 30V/150 A RDS(ON)=4.5mΩ ( ) @ VGS=10V RDS(ON)=6.5mΩ ( ) @ VGS=4.5V...
Datasheet PDF File 30H150 PDF File

30H150
30H150

Overview
30H150 N-Channel Enhancement Mode MOSFET Features • 30V/150 A RDS(ON)=4.
5mΩ ( ) @ VGS=10V RDS(ON)=6.
5mΩ ( ) @ VGS=4.
5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters.
D G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy, L=0.
5mH Note * Current limited by bond wire.
www.
fnk-tech.
com 1 TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating Unit 30 ±20 150 -55 to 150 150 200 120 150* 68 50 20 2.
5 50 225 V °C °C A A A W °C/W °C/W mJ 0752-7777359 Electrical Characteristics (TA = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=20V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A VGS=4.
5V, IDS=20A Diode Characteristics VSDa Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=40A, VGS=0V IDS=40A, dlSD/dt=100A/µs 30H150 Min.
Typ.
30 --1.
0 1.
4 -- 5.
5 - 7.
2 - 0.
85 - 25 - 10 Max.
1 30 1.
7 ±100 7.
5 10 1.
1 - Unit V µA V nA mΩ V ns nC Electrical Characteristics (Cont.
) (TA = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-o...


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