2SK2114, 2SK2115
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching
regulator
Outline
TO-220CFM
D 12 3 1.
Gate
G 2.
Drain 3.
Source
S
2SK2114, 2SK2115
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK2114
2SK2115
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C
Symbol VDSS VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 450 500 ±30 5 20 5 35 150 –55...