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K2111

NEC
Part Number K2111
Manufacturer NEC
Description 2SK2111
Published Jul 29, 2016
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MO...
Datasheet PDF File K2111 PDF File

K2111
K2111

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.
This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters.
FEATURES • Low ON resistance RDS(on) = 0.
6 Ω MAX.
@VGS = 4.
0 V, ID = 0.
5 A • High switching speed ton + toff < 100 ns • Low parasitic capacitance PACKAGE DIMENSIONS (in mm) 4.
5 ± 0.
1 1.
6 ± 0.
2 1.
5 ± 0.
1 0.
8 MIN.
2.
5 ± 0.
1 4.
0 ± 0.
25 SDG 0.
42 ±0.
06 1.
5 0.
42 0.
47 ±0.
06 ±0.
06 3.
0 0.
41+–00.
.
0053 EQUIVALENT CIRCUIT Drain (D) Gate (G) Internal diode Gate protection diode Source (S) PIN CONNECTIONS S: Source D: Drain G: Gate Marking: NU ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg VGS = 0 VDS = 0 TEST CONDITIONS PW ≤ 10 ms, Duty cycle ≤ 50 % 16 cm2 × 0.
7 mm, ceramic substrate used RATING 60 ±20 ±1.
0 ±2.
0 2.
0 150 –55 to +150 UNIT V V A A W ˚C ˚C Document No.
D11231EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan 1996 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL Drain Cut-Off Current IDSS Gate Leakage Current IGSS Gate Cut-Off Voltage VGS(off) Forward Transfer Admittance |yfs| Drain to Source On-State Resistance RDS(on)1 Drain to Source On-State Resistance RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf TEST CONDITIONS VDS = 60 V, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.
5 A VGS = 4.
0 V, ID =0.
5 A VGS = 10 V, ID = 0.
5 A VDS = 10 V, VGS = 0, f = 1.
0 MHz VDD = 25 V...


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