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K2114

Hitachi Semiconductor
Part Number K2114
Manufacturer Hitachi Semiconductor
Description 2SK2114
Published Dec 15, 2015
Detailed Description 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High sp...
Datasheet PDF File K2114 PDF File

K2114
K2114

Overview
2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline TO-220CFM D 12 3 1.
Gate G 2.
Drain 3.
Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114 2SK2115 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25 °C Symbol VDSS VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2114, 2SK2115 Electrical Characteristics (Ta = 25°C) Item Drain to source 2SK2114 breakdown voltage 2SK2115 Gate to source breakdown voltage Gate to source leak current Zero gate 2SK2114 voltage drain current 2SK2115 Gate to source cutoff voltage Static drain to 2SK2114 source on state 2SK2115 resistance Forward transfer admittance Symbol Min V(BR)DSS 450 500 V(BR)GSS ±30 I GSS I DSS — — VGS(off) RDS(on) 2.
0 — — |yfs| 2.
5 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse Test Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr — — — — — — — — — Typ — — — — — 1.
0 1.
2 4.
0 640 160 20 10 25 50 30 0.
95 300 Max Unit —V —V ±10 µA 250 µA 3.
0 V 1.
4 Ω 1.
5 —S — pF — pF — pF — ns — ns — ns — ns —V — ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.
5 A, VGS = 10 V*1 ID = 2.
5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.
5 A VGS = 10 V RL = 12 Ω IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF / dt = 100 A / µs See characteristics curve of 2SK1155, 2SK1156.
3 Cha...


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