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K2111

Kexin
Part Number K2111
Manufacturer Kexin
Description MOS Field Effect Transistor
Published Jul 29, 2016
Detailed Description SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A Hi...
Datasheet PDF File K2111 PDF File

K2111
K2111

Overview
SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.
6 MAX.
@VGS=4.
0V,ID=0.
5A High switching speed SOT-89 4.
50+0.
1 -0.
1 1.
80+0.
1 -0.
1 12 3 0.
48+0.
1 -0.
1 0.
53+0.
1 -0.
1 +0.
12.
50 -0.
1 +0.
14.
00 -0.
1 Unit: mm 1.
50+0.
1 -0.
1 0.
44+0.
1 -0.
1 +0.
10.
80 -0.
1 +0.
12.
60 -0.
1 3.
00+0.
1 -0.
1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation * Channel temperature Storage temperature * 16 cm2X0.
7mm,ceramic substrate used Symbol VDSS VGSS ID Idp PD Tch Tstg Rating 60 20 1.
0 2.
0 2.
0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol Testconditons IDSS VDS=60V,VGS=0 IGSS VGS= 20V,VDS=0 VGS(th) VDS=10V,ID=1mA Yfs VDS=10V,ID=0.
5A VGS=4.
0V,ID=0.
5A RDS(on) VGS=10V,ID=0.
5A Ciss Coss VDS=10V,VGS=0,f=1MHZ Crss td(on) tr td(off) ID=0.
5A,VGS(on)=10V,RL=50 ,RG=10 ,VDD=25V tf +0.
10.
40 -0.
1 1 Gate 11.
.
SBoauserce 222.
.
DDCroralalienicntor 333.
.
GSEmaotuieitrtcere Min Typ Max Unit 1.
0 A 10 A 0.
8 1.
4 2.
0 V 0.
4 S 0.
32 0.
6 0.
24 0.
45 170 pF 87 pF 32 pF 2.
8 ns 2.
3 ns 55 ns 27 ns Marking Marking NU www.
kexin.
com.
cn 1 ...


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