WPM2009D -20V, -4A, 42mŸ, 2.
0W, DFN3x3, P-MOSFET Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance.
WPM2009D is enhancement power MOSFET with 2.
0W power dissipation mounting 1 in2 pad in a DFN3x3 package.
This device is suited for high power charging circuit of mobile phone application.
It also can be used in a high power switching application.
WPM2009D Http://www.
willsemi.
com Bottom DFN3x3-8L Bottom Features z Max Rds(on) 42mŸ @ Vgs=-4.
5V z Max Vds -20V z Max Current -4.
0A z Typical Vgs(th) -0.
65V @ Id=-250uA z Power Dissipation 2.
0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free A...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)