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WPM2005

WillSEMI
Part Number WPM2005
Manufacturer WillSEMI
Description Power MOSFET and Schottky Diode
Published Jan 9, 2016
Detailed Description WPM2005 WPM2005 Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinou...
Datasheet PDF File WPM2005 PDF File

WPM2005
WPM2005

Overview
WPM2005 WPM2005 Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted) Parameter DrainïtoïSource Voltage GateïtoïSource Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s TJ = 25°C TJ = 85°C TJ = 25°C TJ = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Symbol VDS VGS ID PD IDM TJ, TSTG Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS TL Value ï20 ±8.
0 ï2.
9 ï1.
8 ï3.
7 1.
4 2.
2 ï13 ï55 to 150 1.
7 260 Units V V A W A °C A °C DFN3×2-8L D 1 C 8 pin connections: 1 A 2 A S 3 G 4 8 C 7 C 6 D D 5 Marking: JA 1.
Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted) Parameter Symbol Limits Unit J = Specific Device Code A = Date Code Peak repetitive reverse voltage .
DC Blocking voltage Average rectified forward current Order information PartNumber WPM2005Ͳ8/TR VRRM VR IF 20 20 1 Package DFN3*2- 8L  V V A Shipping  3000Tape&Reel http://www.
willsemi.
com Page 1 12/8/2009 Rev3.
3 WPM2005 THERMAL RESISTANCE RATINGS Parameter Symbol JunctionïtoïAmbient – Steady State (Note 2) JunctionïtoïAmbient – t ≤ 5 s (Note 2) 2.
Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
RqJA RqJA MOSFET ELECTRICAL CHARACTERISTICS(TJ =25ć unless otherwise specified) Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate –Source leakage current BVDSS IDSS IGSS VGS = 0V,ID = -250ȝA VDS =-16V,VGS = 0V VGS = f 8V,V DS = 0V...


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