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WPM2006

WillSEMI
Part Number WPM2006
Manufacturer WillSEMI
Description Power MOSFET and Schottky Diode
Published Jan 9, 2016
Detailed Description WPM2006 Power MOSFET and Schottky Diode WPM2006 Features z Featuring a MOSFET and Schottky Diode z Independent Pinou...
Datasheet PDF File WPM2006 PDF File

WPM2006
WPM2006


Overview
WPM2006 Power MOSFET and Schottky Diode WPM2006 Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky DFN2*2 -6L Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted) Parameter DrainŦtoŦSource Voltage GateŦtoŦSource Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State TA = 25°C TA = 85°C TA = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Symbol VDSS VGS ID PD ID PD IDM TJ, TSTG Source Current (Body Diode) (Note 2) IS Value Ŧ20 ±8.
0 Ŧ3 Ŧ2.
3 Ŧ4.
1 1.
45 2.
3 Ŧ2.
0 Ŧ1.
5 0.
7 Ŧ20 Ŧ55 to 150 Ŧ2 Unit V V A W A W ...



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