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WPM2009D

WillSEMI
Part Number WPM2009D
Manufacturer WillSEMI
Description P-MOSFET
Published Jan 9, 2016
Detailed Description WPM2009D -20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET Descriptions This single P-Channel MOSFET is produced using trench proc...
Datasheet PDF File WPM2009D PDF File

WPM2009D
WPM2009D

Overview
WPM2009D -20V, -4A, 42mŸ, 2.
0W, DFN3x3, P-MOSFET Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on resistance performance.
WPM2009D is enhancement power MOSFET with 2.
0W power dissipation mounting 1 in2 pad in a DFN3x3 package.
This device is suited for high power charging circuit of mobile phone application.
It also can be used in a high power switching application.
WPM2009D Http://www.
willsemi.
com Bottom DFN3x3-8L Bottom Features z Max Rds(on) 42mŸ @ Vgs=-4.
5V z Max Vds -20V z Max Current -4.
0A z Typical Vgs(th) -0.
65V @ Id=-250uA z Power Dissipation 2.
0W (Note2) z High performance Trench process z DFN3x3-8L Package z Pb-Free Applications z Battery charging z Load Switch z Power Switch z DC-DC converter Pin Connection Top WPM2009 = Part Number YY = Year WW = Week Marking Order Information Device Package Shipping WPM2009D-8/TR DFN3x3-8L 3000/Tape&Reel Will Semiconductor Ltd.
1 Jan,2012 - Rev.
1.
4 Maximum Ratings...


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