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WPM2005B

WillSEMI
Part Number WPM2005B
Manufacturer WillSEMI
Description Power MOSFET and Schottky Diode
Published Jan 9, 2016
Detailed Description WPM2005B Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each...
Datasheet PDF File WPM2005B PDF File

WPM2005B
WPM2005B

Overview
WPM2005B Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products WPM2005B DFN3×2-8L MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted) Parameter Symbol Value Units Drain-Source voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Power Dissipation Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient VDSS VGS ID IDM PD TJ Tstg RԦJA -20 f8 -2.
7 -10 1.
1 150 -55~150 110 V V A A W ć ć ć/W SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted) Parameter Symbol Limits Unit Peak repetitive reverse voltage .
DC Blocking voltage Average rectified forward current VRRM VR IF 20 20 1 V V A pin connections: 1 A 2 A S 3 G 4 ...


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