CEP6036/CEB6036
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
60V, 135A, RDS(ON) = 4.
6mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
ID
135 95
Drain Current-Pulsed a
IDM 540
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
167 1.
1
Single Pulsed Avalanche Energy ...