Part Number
|
H5N5006FM |
Manufacturer
|
Renesas |
Description
|
Silicon N Channel MOS FET |
Published
|
Apr 8, 2016 |
Detailed Description
|
H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 2.5 Ω typ. • L...
|
Datasheet
|
H5N5006FM
|
Overview
H5N5006FM
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 2.
5 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.
5 A) • Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) • Avalanche ratings
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
123
G S
REJ03G1114-0200 (Previous: ADE-208-1112)
Rev.
2.
00 Sep 07, 2005
1.
Gate 2.
Drain 3.
Source
Rev.
2.
00 Sep 07, 2005 page 1 of 6
H5N5006FM
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode revers...
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