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H5N5006FM

Hitachi
Part Number H5N5006FM
Manufacturer Hitachi
Description Silicon N-Channel MOSFET
Published Mar 13, 2006
Detailed Description H5N5006FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features • • • •...
Datasheet PDF File H5N5006FM PDF File

H5N5006FM
H5N5006FM

Overview
H5N5006FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1112 (Z) 1st.
Edition Mar.
2001 Features • • • • • Low on-resistance: R DS(on) = 2.
5 typ.
Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.
5 A) Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings Outline TO-220FM w w .
D w G t a D S S a e h 3 t e U 4 .
c m o 1 2 1.
Gate 2.
Drain 3.
Source w w w .
D a S a t e e h U 4 t m o .
c H5N5006FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1.
PW 10 µs, duty cycle 1% 2.
Value at Tc = 25°C 3.
Tch 150°C Symbol VDSS VGSS ID ID Note1 (pulse) Ratings 500 ±30 3 12 3 Unit V ...


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