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H5N5006LD

Hitachi
Part Number H5N5006LD
Manufacturer Hitachi
Description (H5N5006xx) Silicon N-Channel MOSFET
Published Mar 13, 2006
Detailed Description H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features • Low o...
Datasheet PDF File H5N5006LD PDF File

H5N5006LD
H5N5006LD

Overview
H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings Outline LDPAK G w w w a .
D D S S ta 1 2 3 e h 1 2 U 4 t e 4 4 .
c m o Rev.
0 Aug.
2002 4 3 1 2 H5N5006LS 3 H5N5006LD H5N5006LM 1.
Gate 2.
Drain 3.
Source 4.
Drain w w w .
D at h S a t e e 4U .
m o c H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 Note 1 Value 500 ±30 3.
5 14 3.
5 3.
5 50 2.
5 150 –55 to +150 Unit V V A A A A W °C/W °C °C Pch Note 2 θch-c Tch Tstg Rev.
0, Aug.
...


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