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H5N5006LM

Renesas
Part Number H5N5006LM
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Apr 8, 2016
Detailed Description H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1115-0100 (Previous: ADE-208-...
Datasheet PDF File H5N5006LM PDF File

H5N5006LM
H5N5006LM

Overview
H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1115-0100 (Previous: ADE-208-1549) Rev.
1.
00 Apr 07, 2006 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H5N5006LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1.
Gate 2.
Drain 3.
Source 4.
Drain H5N5006LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 123 H5N5006LM S Rev.
1.
00 Apr 07, 2006 page 1 of 7 H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)...


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