DatasheetsPDF.com

H5N5006FM

Renesas
Part Number H5N5006FM
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Apr 8, 2016
Detailed Description H5N5006FM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 2.5 Ω typ. • L...
Datasheet PDF File H5N5006FM PDF File

H5N5006FM
H5N5006FM

Overview
H5N5006FM Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 2.
5 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 500 V) • High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.
5 A) • Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) • Avalanche ratings Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 123 G S REJ03G1114-0200 (Previous: ADE-208-1112) Rev.
2.
00 Sep 07, 2005 1.
Gate 2.
Drain 3.
Source Rev.
2.
00 Sep 07, 2005 page 1 of 6 H5N5006FM Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)