DATA SHEET
SILICON
TRANSISTOR
2SC5195
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise
NF = 1.
5 dB TYP.
@VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.
5 dB TYP.
@VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
2SC5195 2SC5195-T1
In-bulk products (50 pcs.
)
Taped products (3 Kpcs/Reel)
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales Representative.
(Unit sample quantity is 50 pcs.
)
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