Part Number
|
TGF2023-2-02 |
Manufacturer
|
TriQuint Semiconductor |
Description
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12 Watt Discrete Power GaN on SiC HEMT |
Published
|
May 6, 2016 |
Detailed Description
|
Applications
• Defense & Aerospace • Broadband Wireless
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Product Fe...
|
Datasheet
|
TGF2023-2-02
|
Overview
Applications
• Defense & Aerospace • Broadband Wireless
TGF2023-2-02
12 Watt Discrete Power GaN on SiC HEMT
Product Features
• Frequency Range: DC - 18 GHz • 40.
1 dBm Nominal PSAT at 3 GHz • 73.
3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.
82 x 0.
92 x 0.
10 mm
Functional Block Diagram
General Description
The TriQuint TGF2023-2-02 is a discrete 2.
5 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process.
This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias ope...
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