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SMK1060FG

KODENSHI
Part Number SMK1060FG
Manufacturer KODENSHI
Description Advanced N-Ch Power MOSFET
Published May 16, 2016
Detailed Description SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(o...
Datasheet PDF File SMK1060FG PDF File

SMK1060FG
SMK1060FG

Overview
SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.
6Ω (Typ.
)  Low gate charge: Qg=35nC (Typ.
)  Low reverse transfer capacitance: Crss=18pF (Typ.
)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SMK1060FG SMK1060G TO-220FT-3L (Short Dambar) GDS TO-220FT-3L Marking Information AUAKUK S◎M△K1ΔY0YM6MD0GDD D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.
g.
) ◎△YMDD -.
◎: Option Code -.
△: Factory Management Code -.
YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD TJ Tstg * Limited only maximum junction temperature Rev.
date: 23-JUN-14 KSD-T0O154-000 Rating 600 30 10 6.
32 40 480 10 11.
6 40 150 -55~150 Unit V V A A A mJ A mJ W C C www.
auk.
co.
kr 1 of 8 Thermal Characteristics Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth(j-c) Rth(j-a) SMK1060FG Rating Max.
3.
1 Max.
62.
5 Unit C/W Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance (Note 3) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time (Note 3,4) Rise time (Note 3,4) Turn-off delay time (Note 3,4) Fall time (Note 3,4) Total gate charge (Note 3,4) Gate-source charge (Note 3,4) Gate-drain charge (Note 3,4) BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss...


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