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SMK1060FJ

KODENSHI
Part Number SMK1060FJ
Manufacturer KODENSHI
Description Advanced N-Ch Power MOSFET
Published May 16, 2016
Detailed Description SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=600V(Min.)  Low...
Datasheet PDF File SMK1060FJ PDF File

SMK1060FJ
SMK1060FJ

Overview
SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=600V(Min.
)  Low Crss : Crss=18pF(Typ.
)  Low gate charge : Qg=35nC(Typ.
)  Low RDS(on) : RDS(on)=0.
75Ω(Max.
) Ordering Information Type No.
Marking Package Code SMK1060FJ SMK1060 TO-220F-3L (J Forming) PIN Connection G DS G TO-220F-3L Marking Diagram AAUUKK SMGΔKYYM1M0D6DD0D SDB20D45 Column 1 : Manufacturer Column 2 : Production Information e.
g.
) GYMDD -.
G : Factory management code -.
YMDD : Date Code (year, month, date) Column 3 : Device Code D S Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current (DC) * Drain current (Pulsed) * ID TC=25C TC=100C IDM Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy ② ② ① ① PD IAS EAS IAR EAR Junction temperature TJ Storage temperature range Tstg * Limited by maximum junction temperature Rating 600 30 10 5.
8 38 40 10 480 10 11.
6 150 -55~150 Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ.
- Max.
3.
1 62.
5 Unit V V A A A W A mJ A mJ C Unit C/W KSD-T0O069-000 1 SMK1060FJ Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Drain-source breakdown voltage BVDSS ID=250uA, VGS=0V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS Drain-source cut-off current IDSS VDS=600V, VGS=0V Gate leakage current Drain-source on-resistance Forward transfer conductance ④ ④ IGSS RDS(on) gfs VDS=0V, VGS=30V VGS=10V, ID=5.
0A VDS=10V, ID=5.
0A Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VGS=0V, VDS=25V f=1 MHz Turn-on delay time Rise time Turn-off delay time td(on) tr td(off) VDD=300V, ID=10A RG=25Ω ③④ Fall time tf Total gate charge Gate-source charge Gate-drain charge Qg VDS=480V, ...


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