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SMK1060D2

KODENSHI KOREA
Part Number SMK1060D2
Manufacturer KODENSHI KOREA
Description Advanced N-Ch Power MOSFET
Published Aug 6, 2014
Detailed Description SMK1060D2 Advanced N-Ch Power MOSFET SWITCHING REGURATOR APPLICATIONS Features • • • • High Voltage : BVDSS=600V(Min.) ...
Datasheet PDF File SMK1060D2 PDF File

SMK1060D2
SMK1060D2

Overview
SMK1060D2 Advanced N-Ch Power MOSFET SWITCHING REGURATOR APPLICATIONS Features • • • • High Voltage : BVDSS=600V(Min.
) Low Crss : Crss=18pF(Typ.
) Low gate charge : Qg=35nC(Typ.
) Low RDS(on) : RDS(on)=0.
75Ω(Max.
) PIN Connection D D Ordering Information Type No.
SMK1060D2 Marking SMK1060 Package Code D2-PAK G S G S D2-PAK Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK1060 Column 2 : Production Information e.
g.
) GYMDD -.
G : Factory management code -.
YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID TC=25℃ TC=100℃ IDM PD IAS EAS IAR EAR TJ Tstg Rating 600 ±30 10 6.
32 40 130 10 490 10 11.
6 150 -55~150 Unit V V A A A W A mJ A mJ °C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ.
- Max.
0.
96 62.
5 Unit ℃/W KSD-T6S005-001 1 SMK1060D2 Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250uA, VGS=0V ID=250uA, VDS=VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=5.
0A VDS=10V, ID=5.
0A VGS=0V, VDS=25V f=1 MHz Min.
Typ.
Max.
600 2.
0 0.
60 8.
0 2000 160 18 23 69 144 77 35 9.
0 10 57 4.
0 1 ±100 0.
75 2350 215 Unit V V uA nA Ω S...


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