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SMK1060P

KODENSHI KOREA
Part Number SMK1060P
Manufacturer KODENSHI KOREA
Description Advanced N-Ch Power MOSFET
Published Aug 6, 2014
Detailed Description Semiconductor SMK1060P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V...
Datasheet PDF File SMK1060P PDF File

SMK1060P
SMK1060P


Overview
Semiconductor SMK1060P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.
) • Low Crss : Crss=18pF(Typ.
) • Low gate charge : Qg=35nc(Typ.
) • Low RDS(on) :RDS(on)=0.
75Ω(Max.
) PIN Connection D G Ordering Information Type No.
SMK1060P Marking SMK1060 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)* Drain current (Pulsed)* Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 10 6.
32 40 120 10 490 10 11.
6 150 -55~150 Unit V V A A A W A mJ A mJ °C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ.
- Max 1.
04 62.
5 Unit ℃/W KSD-T0P023-000 1 SMK1060P Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250μA, VGS=0 ID=250μA, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=5.
0A VDS=10V, ID=5.
0A VGS=0V, VDS=25V f=1MHz Min.
600 2.
0 - Typ.
0.
60 8.
0 2000 160 18 23 69 144 77 35 9.
0 10 Max.
4.
0 1 ±100 0.
75 2350 215 57 - Unit V V μA nA Ω S pF VDD=300V, ID=10A RG=25Ω - ③④ VDS=480V, VGS=10V ID=10A - ns nC ③④ Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic...


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