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MRF18060BS

Part Number	MRF18060BS
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	May 28, 2016
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Tran...
Datasheet	MRF18060BS PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in class AB for PCN–PCS/cellular radio and WLL applications.
Specified for GSM1930 – 1990 MHz.
• GSM Performance, Full Frequency Band (1930 – 1990 MHz) Power Gain — 13 dB (Typ) @ 60 Watts (CW) Efficiency — 45% (Typ) @ 60 Watts (CW) • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection...

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