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2SC5890

Part Number	2SC5890
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Jun 18, 2016
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5890 DESCRIPTION ·High Gain Bandwidth Product fT = 7.8 GHz TYP...
Datasheet	2SC5890 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5890 DESCRIPTION ·High Gain Bandwidth Product fT = 7.
8 GHz TYP.
·High power gain and low noise figure ; PG = 12 dB TYP.
, NF = 1.
0 dB typ.
@ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 1.
5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 75 mA 0.
7 W 150 ℃ Tstg Storage ...

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