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2SC6090

Part Number	2SC6090
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6090 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)...
Datasheet	2SC6090 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6090 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CEO= 1500V (Min) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature ...

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