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BU2527AW

Inchange Semiconductor
Part Number BU2527AW
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jun 26, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switch...
Datasheet PDF File BU2527AW PDF File

BU2527AW
BU2527AW


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.
5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 8 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
0 ℃/W BU2527AW isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHAR...



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