DatasheetsPDF.com

BU2527AW

NXP
Part Number BU2527AW
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New gene...
Datasheet PDF File BU2527AW PDF File

BU2527AW
BU2527AW

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.
Features improved RBSOA performance and is suitable for operation up to 64 kHz.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
6.
0 1.
7 MAX.
1500 800 12 30 125 5.
0 2.
0 UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 6.
0 A; IB = 1.
2 A Icsat = 6.
0 A; IB(end) = 0.
55 A PINNING - SOT429 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Ab...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)