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BU2527AX

NXP
Part Number BU2527AX
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New gene...
Datasheet PDF File BU2527AX PDF File

BU2527AX
BU2527AX

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors.
Features improved RBSOA performance and is suitable for operation up to 64 kHz.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
6.
0 1.
7 MAX.
1500 800 12 30 45 5.
0 2.
0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 6.
0 A; IB = 1.
2 A ICsat = 6.
0 A; IB(end) = 0.
55 A PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accorda...


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