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CLY10

Siemens Semiconductor Group
Part Number CLY10
Manufacturer Siemens Semiconductor Group
Description GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
Published Mar 23, 2005
Detailed Description GaAs FET CLY 10 ______________________________________________________________________________________________________...
Datasheet PDF File CLY10 PDF File

CLY10
CLY10


Overview
GaAs FET CLY 10 _________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.
5 GHz * Wide operating voltage range: 2.
7 to 6 V * POUT at VD=3V, f=1.
8GHz 28.
5 dBm typ.
* High efficiency better 55 % ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Q62702-L94 1 G Pin Configuration 2 3 4 S D S Package 1) CLY 10 CLY 10 SOT 223 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Total power dissipation (Ts < 80 °C) 2) Total power dissipation (Ts < 110 °C) 2) Symbol VDS VDG VGS ID TCh Tstg PtotDC Values 9 12 -6 2.
1 150 -55.
.
.
+150 3.
5 2.
0 Unit V V V A °C °C W Thermal resistance Channel - soldering point 2) RthChS ≤20 K/W 1) Dimensions see chapter Package Outlines 2) Ts is measured on the source lead to the PCB under load.
Siemens Aktiengesellschaft pg.
1/7 17.
12.
96 HL EH PD 21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 10 _________________________________________________________________________________________________________ Symbol min 1.
2 -3.
8 typ 1.
6 10 -2.
8 max 2.
4 200 35 -1.
8 Unit A µA µA V dB IDSS ID IG VGS(p) G Drain-source pinch-off current VDS = 3 V VGS = -3.
8 V Gate pinch-off current VDS = 3 V VGS = -3.
8 V Pinch-off Voltage VDS= 3 V ID=200µA Small Signal Gain *) VDS = 3 V ID = 700 mA Pin = 0 dBm f = 1.
8 GHz - 9 dB Small Signal Gain **) VDS = 3 V ID = 700 mA Pin = 0 dBm f = 1.
8 GHz G 8 28.
5 - Output Power VDS = 3 V ID = 700 mA Pin = 20.
5 dBm f = 1.
8 GHz Po 28 dBm Output Power VDS = 5 V ID = 700 mA Pin = 20 dBm f = 0.
9 GHz Po 32.
0 32.
5 - dBm 1dB-Compression Point VDS = 3 V ID = 700 mA f = 1.
8 GHz P1dB P1dB f = 1.
8GHz 40 28.
5 32.
5 55 - dBm dB...


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