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CLY15

Siemens Semiconductor Group
Part Number CLY15
Manufacturer Siemens Semiconductor Group
Description GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
Published Mar 23, 2005
Detailed Description GaAs FET CLY 15 ______________________________________________________________________________________________________...
Datasheet PDF File CLY15 PDF File

CLY15
CLY15

Overview
GaAs FET CLY 15 ________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.
5 GHz * Operating voltage range: 2.
7 to 6 V * POUT at VD=3V, f=1.
8 GHz typ.
31.
5 dBm * Efficiency better 50% S D S G ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CLY 15 CLY 15 Q62702-L99 SOT 223 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Total power dissipation (Ts < 80°C) Ts: Temperature at soldering point Symbol VDS VDG VGS ID TCh Tstg Ptot 9 12 -6 5 150 -55.
.
.
+150 4.
7 Unit V V V A °C °C W Thermal resistance Channel-soldering point (GND) RthChS < 15 K/W 1) Dimensions see chapter Package Outlines Siemens Aktiengesellschaft pg.
1/7 09/96 HL EH PD 21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current *) VDS = 3V VGS = 0V CLY 15 ________________________________________________________________________________________________________ Symbol min 2.
4 -3.
8 typ 3.
2 20 -2.
8 max 4.
8 400 70 -1.
8 Unit A µA µA V dB IDSS ID Cut-off current VDS = 3V VGS = -3.
8V Gate cut-off current VDS = 3V VGS = -3.
8V IG VGS(p) G f = 1.
8GHz Pinch-off Voltage VDS=3V ID=400µA Small Signal Gain *) VDS = 3V Pin = 5dBm ID = 1.
4A - 6 32.
5 dBm Output Power *) VDS = 3V Pin = 29dBm Po f = 1.
8GHz 32 ID = 1.
4A Output Power *) VDS = 5V Pin = 30 dBm Po f = 1.
8GHz 34.
5 35 - dBm ID = 1.
4A 1dB-Compression Point *) VDS = 3V ID = 1.
4A f = 1.
8GHz P1dB P1dB ηD 45 31.
5 34.
5 50 - dBm dBm % 1dB-Compression Point *) VDS = 5V ID = 1.
4A f = 1.
8GHz Power Added Efficiency *) VDS = 3V Pin = 29dBm ID = 1.
4A f = 1.
8GHz *) pulsed measurement; duty cycle 1:10; ton = 1ms, power matching conditions.
Siemens Aktiengesellschaft pg.
2/7...


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