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IRF620A

Fairchild Semiconductor
Part Number IRF620A
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 4, 2016
Detailed Description Advanced Power MOSFET IRF620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitanc...
Datasheet PDF File IRF620A PDF File

IRF620A
IRF620A

Overview
Advanced Power MOSFET IRF620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 0.
626 Ω(Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds BVDSS = 200 V RDS(on) = 0.
8 Ω ID = 5 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Value 200 5 3.
2 18 +_ 30 67 5 4.
7 5.
0 47 0.
38 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/oC oC Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
2.
65 -62.
5 Units oC/W Rev.
B ©1999 Fairchild Semiconductor Corporation IRF620A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min.
Typ.
Max.
Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current 200 -- --- 0.
24 -2.
0 -- 4.
0 -- -- 100 -- -- -100 -- -- 10 -- -- 100 V VGS=0V,ID=250µA V/oC ID=250µA See Fig 7 V VDS=5V,ID=250µA nA VGS=30V VGS=-30V VDS=200V µA VDS=160V,TC=125 oC Static Drain-Source On-State Resistance -- -- 0.
8 Ω VGS=10V,ID=2.
5A O4 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance -- 2.
41 -- Ω VDS=40V,ID=2.
5A O4 --...


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