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IRF620A

Inchange Semiconductor
Part Number IRF620A
Manufacturer Inchange Semiconductor
Description N-Channel Mosfet Transistor
Published Aug 6, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF620A FEATURES ·Low RDS(on) = 0.626...
Datasheet PDF File IRF620A PDF File

IRF620A
IRF620A

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF620A FEATURES ·Low RDS(on) = 0.
626Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 5A IDM Drain Current-Single Pluse 18 A PD Total Dissipation @TC=25℃ 47 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
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cn INCHANGE Semiconductor isc Product Specification ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.
65 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn INCHANGE Semiconductor isc IRF620A N-Channel isc Product Specification MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.
25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VDS= VGS; ID= 0.
25mA VGS= 10V; ID=2.
5A VGS= ±30V;VDS= 0 VDS= 200V; VGS= 0 VDS= 160V; VGS= 0; Tj= 125℃ IS= 5A; VGS= 0 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.
0MHz MIN MAX UNIT 200 V 24V 0.
8 Ω ±100 nA 10 100 μA 1.
5 V 360 pF 65 pF 30 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=100V,ID=5A RG=18Ω Tf · Fall Time MIN ...


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