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IRFIZ24A

Samsung
Part Number IRFIZ24A
Manufacturer Samsung
Description Power MOSFET
Published Aug 4, 2016
Detailed Description Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacit...
Datasheet PDF File IRFIZ24A PDF File

IRFIZ24A
IRFIZ24A

Overview
Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leakage Current : 10 µA (Max.
) @ VDS = 60V Lower RDS(ON) : 0.
050 Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25oC ) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25oC )* Total Power Dissipation (TC=25oC ) Linear Derating Factor O2 O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds BVDSS = 60 V RDS(on) = 0.
07 Ω ID = 17 A D2-PAK I2-PAK 2 1 3 1 2 3 1.
Gate 2.
Drain 3.
Source Value 60 17 12 68 +_ 20 149 17 ...


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