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IRFIZ24G

INCHANGE
Part Number IRFIZ24G
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 15, 2020
Detailed Description iscN-Channel MOSFET Transistor IRFIZ24G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.1Ω (MAX) ·Enhancement mo...
Datasheet PDF File IRFIZ24G PDF File

IRFIZ24G
IRFIZ24G

Overview
iscN-Channel MOSFET Transistor IRFIZ24G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.
1Ω (MAX) ·Enhancement mode: Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Pulsed 56 A PD Total Dissipation @TC=25℃ 37 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 4.
1 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltag...


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